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Shenzhen Goford Electronics Co., Ltd.
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TO252 Package
Showing 11 - 20 of 64, total 7 pages [
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smd transistor to252 n channel mosfet 200v 9a
Specification: 9A 200V TO252 83W package N Channel 0.21次
Detail: BVDSS: 200V ID:9A Package:TO252 Vgs(th) max (V): 2V Rds(on) m次(typ) @Vgs=10V: 0.21次
12
goford 200v 5a n-channel mosfet 5n20a for led
Specification: 5A 200V 78W TO252 package N Channel 0.49次
Detail: BVDSS: 200V ID:5A Package:TO252 Vgs(th) max (V): 3V Rds(on) m次(typ) @Vgs=10V: 0.49次
13
mosfet 18n20 65.8w 18a 200v to-251/252
Specification: 18A 200V 65.8W TO252 package N Channel 0.136次
Detail: BVDSS: 200V ID:16A Package:TO252 Vgs(th) max (V): 2V Rds(on) m次(typ) @Vgs=10V: 0.136次
14
goford 200v 5a n-channel mosfet 5n20a for led
Specification: 5A 200V TO252 package N Channel 0.49次
Detail: BVDSS: 200V ID:5A Package:TO252 Vgs(th) max (V): 3V Rds(on) m次(typ) @Vgs=10V: 0.49次
15
ap18n20gh 18a 200v goford 18n20 mosfet for led
Specification: 18A 200V TO252 package N Channel
Detail: BVDSS: 40V ID:100A Package:TO252 Vgs(th) max (V): 1.9V Rds(on) m次(typ) @Vgs=0.136次
16
fast switching speed transistor g100n04 to252 40v
Specification: 100A 40V TO252 package N Channel
Detail: BVDSS: 40V ID:100A Package:TO252 Vgs(th) max (V): 1.9V Rds(on) m次(typ) @Vgs=4.5V: 7m次
17
630a field effect transistor mosfet 200v 9a to-252
Specification: 630A Field Effect Transistor MOSFET 200V 9A TO-252
Detail: VDS:20V ID:9A PD:83W Package: TO220 Configuration: N channel RDS(on)(typ)(@10V):0.21?
18
to-252 n-ch 30v 80a mosfet g80n03
Specification: TO-252 N-Ch 30V 80A MOSFET G80N03
Detail: VDS:30V ID:80A PD:83W Package: TO220 Configuration: N channel RDS(on)(typ)(@10V):5 m次
19
100v 11a to-252 n-channel 11n10c mosfet
Specification: 100V 11A TO-252 N-Channel 11N10C Mosfet for TV LED Backlight
Detail: VDS: 100V ID: 11A Package:TO252 PD:35W Configuration: N Channel RDS(on)(typ)(@10V):85m?
20
fqd4n60c to-252 600v 4a mosfet
Specification: 600V 4A TO-252 N-Channel 4N60 Mosfet
Detail: VDS: 600V ID: 4A Package:TO252 PD:100W Configuration: N Channel RDS(on)(typ)(@10V):2次
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